JPH0539634Y2 - - Google Patents
Info
- Publication number
- JPH0539634Y2 JPH0539634Y2 JP6462286U JP6462286U JPH0539634Y2 JP H0539634 Y2 JPH0539634 Y2 JP H0539634Y2 JP 6462286 U JP6462286 U JP 6462286U JP 6462286 U JP6462286 U JP 6462286U JP H0539634 Y2 JPH0539634 Y2 JP H0539634Y2
- Authority
- JP
- Japan
- Prior art keywords
- interlayer insulating
- insulating film
- fuse element
- film
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011229 interlayer Substances 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 23
- 239000010410 layer Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 230000002950 deficient Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6462286U JPH0539634Y2 (en]) | 1986-04-28 | 1986-04-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6462286U JPH0539634Y2 (en]) | 1986-04-28 | 1986-04-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62177037U JPS62177037U (en]) | 1987-11-10 |
| JPH0539634Y2 true JPH0539634Y2 (en]) | 1993-10-07 |
Family
ID=30900942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6462286U Expired - Lifetime JPH0539634Y2 (en]) | 1986-04-28 | 1986-04-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0539634Y2 (en]) |
-
1986
- 1986-04-28 JP JP6462286U patent/JPH0539634Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62177037U (en]) | 1987-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3241106B2 (ja) | ダイナミック型半導体記憶装置及びその製造方法 | |
| KR100225715B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| US20010019180A1 (en) | Semiconductor integrated circuit device and process for manufacturing the same | |
| US5406102A (en) | Semiconductor device and manufacturing method thereof | |
| JP6448424B2 (ja) | 半導体装置およびその製造方法 | |
| US5802000A (en) | Highly integrated semiconductor device having stepwise bit lines | |
| JP2818964B2 (ja) | 積層構造の電荷蓄積部を有する半導体記憶装置の製造方法 | |
| JPH0539634Y2 (en]) | ||
| JP2000004000A (ja) | 強誘電体メモリ装置 | |
| JP3913927B2 (ja) | 半導体集積回路装置 | |
| JPH0722508A (ja) | 半導体集積回路装置 | |
| JP2806676B2 (ja) | ダイナミックランダムアクセスメモリ | |
| JP3202501B2 (ja) | 半導体記憶装置及びその製造方法 | |
| JPH11260922A (ja) | 半導体装置及びその製造方法 | |
| JP3328249B2 (ja) | 半導体装置およびその製造方法 | |
| JPH0587178B2 (en]) | ||
| JP2749689B2 (ja) | 半導体集積回路装置及びその製造方法 | |
| JPH02159058A (ja) | 半導体メモリセル | |
| JP2737952B2 (ja) | 半導体装置 | |
| JPH05243521A (ja) | 半導体メモリ装置 | |
| JP2943268B2 (ja) | 半導体メモリ及びその製造方法 | |
| JP2004031553A (ja) | 半導体素子及びその製造方法 | |
| KR930000717B1 (ko) | 적층형 커패시터를 갖는 디램 | |
| JPH08172168A (ja) | 強誘電体不揮発性記憶装置 | |
| JPH0590539A (ja) | 半導体記憶装置 |